Si4840/44-DEMO
Table 3. Si4840/44-DEMO Board Bill of Materials Rev. 1.3 (Continued)
Item Qty
Reference
Description
Value
54
55
56
57
58
59
60
61
62
63
64
65
66
2
1
1
1
1
1
4
1
8
1
1
1
1
L3, L4
LCD1
J1
J6
ANT1
BAT1
S11-14
S2
S3-10
S1
TP3
VR1
VR2
IND,SM,0603
LCD
BNC VERTICAL
SMA VERTICAL
AW ferrite stick antenna
BATTERY BOX ,AAA*2 SIZE
One pole two throw switch
Single pole twelve throw switch
Push button DIP
Push button SM
CONN,TH,1x3,HDR
100k,±10%,Variable resistor(POT)
10k,±20%,Variable resistor(POT)
120nH
LCD
BNC for FM testing
SMA for AM testing
220uH
Push button
Push button
CONN,TH,1x3,HDR
100k
10k
16
Rev 0.1
相关PDF资料
SI4842BDY-T1-E3 MOSFET N-CH 30V 28A 8-SOIC
SI4844-A10-GU IC AM/FM RX FOR DIGITAL RADIOS
SI4848DY-T1-GE3 MOSFET N-CH 150V 8-SOIC
SI4866BDY-T1-E3 MOSFET N-CH 12V 21.5A 8-SOIC
SI4866DY-T1-GE3 MOSFET N-CH 12V 11A 8-SOIC
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SI4886DY-T1-GE3 MOSFET N-CH 30V 9.5A 8-SOIC
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相关代理商/技术参数
SI4840DY 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-E3 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-E3 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP
SI4840DY-T1 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-T1-E3 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET TRANSISTOR TRANS POLARITY (NW)
SI4840DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI4840DY-T1-GE3 功能描述:MOSFET 40V 14A 3.1W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube